9 Products - Full Bridge IGBT Gate Drivers at Farnell element14. Competitive prices from the leading Full Bridge IGBT Gate Drivers distributor. Check our stock. The DRV8701 is a single H-bridge gate driver that – 6-mA to 150-mA Source Current uses four external N-channel MOSFETs targeted to – 12.5-mA to 300-mA Sink Current drive a 12-V to 24-V bidirectional brushed DC motor.
High-voltage power gate drivers from target low- to mid-power applications and can be used in end products like white goods, lighting ballasts, and industrial applications, such as motor control. These high-voltage, high-side, and low-side drivers are specified over a wide temperature range (-40°C.
The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently. The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage.
The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. Hardware and software information. The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling. Both controlling and power signals are available on pin strip for easy connection to customer's board.
Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs: Low RDS(on) = 320 mΩ, BVDSS = 600V • Suitable for operating as: Full-bridge or Dual independent half-bridges • Wide input supply voltage down to 6.5 VUVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diodes.